document number: 94573 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 04-jan-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 high performance schottky generation 5.0, 20 a vs-20ut04, vs-20wt04fn vishay semiconductors note ?v f measured at 125 c, connecting 2 anode pins features ? 175 c high performance schottky diode ? very low forward voltage drop ? extremely low reverse leakage ? optimized v f vs. i r trade off for high efficiency ? increased ruggedness for re verse avalanche capability ? rbsoa available ? negligible switching losses ? submicron trench technology ? compliant to rohs directive 2002/95/ec applications ? specific for pv cells bypass diode ? high efficiency smps ? high frequency switching ? output rectification ? reverse battery protection ? freewheeling ? dc/dc systems ? increased power density systems product summary package d-pak (to-252aa), i-pak (to-251aa) i f(av) 20 a v r 45 v v f at i f 0.53 v i rm max. 7 ma at 125 c t j max. 175 c diode variation single die e as 108 mj i-pak (to-251aa) d-pak (to-252aa) vs-20ut04 vs-20wt04fn base cathode anode anode 4, 2 3 1 base cathode anode anode 4, 2 3 1 major ratings and characteristics symbol characteristics values units v rrm 45 v v f 20 apk, t j = 125 c (typical, measured connecting 2 anode pins) 0.480 v t j range - 55 to 175 c voltage ratings parameter symbol test conditions vs-20ut04 vs-20wt04fn units maximum dc reverse voltage v r t j = 25 c 45 v
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94573 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 04-jan-11 vs-20ut04, vs-20wt04fn vishay semiconductors high performance schottky generation 5.0, 20 a note (1) measured connecting 2 anode pins notes (1) pulse width < 300 s, duty cycle < 2 % (2) only 1 anode pin connected absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) 50 % duty cycle at t c = 153 c, rectangular waveform 20 a maximum peak one cycle non-repetitive surge current i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied (1) 900 a 10 ms sine or 6 ms rect. pulse 220 non-repetitive avalanche energy e as t j = 25 c, i as = 7 a, l = 4.4 mh 108 mj repetitive avalanche current i ar limited by frequency of operat ion and time pulse duration so that t j < t j max. i as at t j max. as a function of time pulse i as at t j max. a electrical specifications parameter symbol test condi tions typ. max. units forward voltage drop v fm (1)(2) 10 a t j = 25 c 0.505 0.540 v 20 a 0.570 0.610 10 a t j = 125 c 0.415 0450 20 a 0.520 0.580 reverse leakage current i rm (1) t j = 25 c v r = rated v r - 100 a t j = 125 c - 7 ma junction capacitance c t v r = 5 v dc (test signal range 100 khz to 1 mhz), 25 c 1900 - pf series inductance l s measured lead to lead 5 mm from package body - - nh maximum voltage rate of change dv/dt rated v r - 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 55 to 175 c maximum thermal resistance, junction to case r thjc dc operation 1.2 c/w typical thermal resistance, case to heatsink r thcs 0.3 approximate weight 2g 0.07 oz. marking device case style i-pak 20ut04 case style d-pak 20wt04fn
document number: 94573 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 04-jan-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vs-20ut04, vs-20wt04fn high performance schottky generation 5.0, 20 a vishay semiconductors fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics i f - instantaneous forward current (a) v fm - forward volta g e drop (v) 0 0.2 0.4 0.8 1.2 0.6 1.0 1.4 1.6 1 10 100 94573_01 t j = 25 c t j = 125 c t j = 175 c i r - reverse current (ma) v r - reverse volta g e (v) 0 5 10 15 30 25 40 35 20 45 0.0001 0.001 0.01 0.1 1 10 100 94573_02 t j = 125 c t j = 175 c t j = 150 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c c t - junction capacitance (pf) v r - reverse volta g e (v) 01020 40 30 515 35 25 45 100 10 000 1000 94573_03 0.01 0.1 1 10 0.00001 94573_04 0.0001 0.001 0.01 0.1 t 1 - rectan g ular pulse duration (s) z thjc - thermal impedance (c/w) 1 s ingle pul s e (thermal re s i s tance) d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94573 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 04-jan-11 vs-20ut04, vs-20wt04fn vishay semiconductors high performance schottky generation 5.0, 20 a fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - maximum non- repetitive surge current note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r allowable case temperature (c) i f(av) - avera g e forward current (a) 20 15 10 525 30 0 160 180 120 140 150 170 130 94573_05 sq uare wave (d = 0.50) 80 % rated v r applied s ee note (1) dc avera g e power loss (w) i f(av) - avera g e forward current (a) 20 25 15 10 5 30 0 15 20 0 10 5 94573_06 180 120 90 60 30 dc rm s limit 100 10 100 t p - square wave pulse duration (s) i fsm - non-repetitive surge current (a) 94573_07 1000 10 000 1000
document number: 94573 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 04-jan-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 vs-20ut04, vs-20wt04fn high performance schottky generation 5.0, 20 a vishay semiconductors fig. 8 - reverse bias safe operating area (avalanche current vs. rectangular pulse duration) fig. 9 - reverse bias safe operating area (avalanche energy vs. rectangular pulse duration) 0.1 1 10 100 1000 110 rectan g ular pulse duration (s) avalanche current (a) 100 94573_08 t j = 25 c t j = 125 c t j = 175 c 10 100 1000 110 rectan g ular pulse duration (s) avalanche ener g y (mj) 100 t j = 25 c t j = 125 c t j = 175 c 94573_09
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94573 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 04-jan-11 vs-20ut04, vs-20wt04fn vishay semiconductors high performance schottky generation 5.0, 20 a ordering information table links to related documents dimensions www.vishay.com/doc?95024 part marking information www.vishay.com/doc?95025 packaging information www.vishay.com/doc?95033 spice model www.vishay.com/doc?95027 1 - vishay semiconductors product 2 - current rating (20 a) 3 - package: u = i-pak w = d-pak 4 - t = trench 5 - voltage code (45 v) 7 - d-pak, i-pak: none = tube (75 pieces) d-pak only: tr = tape and reel trl = tape and reel (left oriented) trr = tape and reel (right oriented) 6 - to-252aa (d-pak) device code 5 1 3 2 4 6 7 vs- 20 u t 04 fn trl
document number: 95024 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 05-jan-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 i-pak - s, d-pak outline dimensions vishay semiconductors dimensions for i-pak - s in millimeters symbol dimensional requirements min. nom. max. e 6.40 6.60 6.70 l 3.98 4.13 4.28 l4 0.66 0.76 0.86 l5 1.96 2.16 2.36 d 6.00 6.10 6.20 h 11.05 11.25 11.45 b 0.64 0.76 0.88 b2 0.77 0.84 1.14 b3 5.21 5.34 5.46 b4 0.41 0.51 0.61 e 2.286 bsc a 2.20 2.30 2.38 c 0.40 0.50 0.60 c2 0.40 0.50 0.60 d1 5.30 - - e1 4.40 - - e d l5 l4 ee a c2 l c h d1 1 2 3 4 b b3 b2 b3 e1
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 95024 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 05-jan-11 outline dimensions vishay semiconductors i-pak - s, d-pak dimensions for d-pak in millimeters and inches notes (1) dimensioning and toleranc ing as per asme y14.5m-1994 (2) lead dimension uncontrolled in l5 (3) dimension d1, e1, l3 and b3 establish a minimum mounting surface for thermal pad (4) section c - c dimension apply to the flat section of the lead between 0.13 and 0. 25 mm (0.005 and 0.10") from the lead tip (5) dimension d, and e do not includ e mold flash. mold flash shall not exceed 0.127 mm (0.005") per side. th ese dimensio ns are meas ured at the outermost extremes of the plastic body (6) dimension b1 and c1 appl ied to base metal only (7) datum a and b to be determined at datum plane h (8) outline conforms to jedec outline to-252aa symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 2.18 2.39 0.086 0.094 e 2.29 bsc 0.090 bsc a1 - 0.13 - 0.005 h 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 l 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 l1 2.74 bsc 0.108 ref. b3 4.95 5.46 0.195 0.215 3 l2 0.51 bsc 0.020 bsc c 0.46 0.61 0.018 0.024 l3 0.89 1.27 0.035 0.050 3 c2 0.46 0.89 0.018 0.035 l4 - 1.02 - 0.040 d 5.97 6.22 0.235 0.245 5 l5 1.14 1.52 0.045 0.060 2 d1 5.21 - 0.205 - 3 ? 0 10 0 10 e 6.35 6.73 0.250 0.265 5 ?1 0 15 0 15 e1 4.32 - 0.170 - 3 ?2 25 35 25 35 ? 1 e (5) b3 (3) 0.010 cab l3 (3) b a c h c l2 d (5) l4 b 2 x e b2 (2) l5 1 2 3 4 ? 2 a c2 a a h seating plane c detail ?c? (7) seating plane a1 detail ?c? rotated 90 cw scale: 20:1 (l1) c c l ? gauge plane lead tip m 0.010 cab m 32 4 1 e1 d1 min. 0.265 (6.74) min. 0.245 (6.23) min. 0.089 (2.28) min. 0.06 (1.524) 0.488 (12.40) 0.409 (10.40) 0.093 (2.38) 0.085 (2.18) pad layout
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